Advanced Memristor Modeling

The investigation of new memory schemes, neural networks, computer 

systems and many other improved electronic devices is very important for 

future generation’s electronic circuits and for their widespread 

application in all the areas of industry. In this aspect the analysis of new 

efficient and advanced electronic elements and circuits is an essential field 

of the highly developed electrical and electronic engineering. The 

resistance-switching phenomenon, observed in many amorphous oxides has been 

investigated since 1970 and it is a promising technology for constructing new 

electronic memories. It has been established that such oxide materials have 

the ability for changing their conductance in accordance to the applied 

voltage and memorizing their state for a long-time interval. Similar 

behaviour has been predicted for the memristor element by Leon Chua in 1971. 

The memristor is proposed in accordance to symmetry considerations and the 

relationships between the four basic electric quantities - electric current 

i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential 

passive one-port element together with the resistor, inductor, and capacitor. 

The Williams HP research group has made a link between resistive switching 

devices, and the memristor proposed by Chua. A number of scientific papers 

related to memristors and memristor devices have been issued and several 

memristor models have been proposed. The memristor is a highly nonlinear 

component. It relates the electric charge q and the flux linkage, expressed 

as a time integral of the voltage. The memristor element has the important 

capability for remembering the electric charge passed through its 

cross-section and its respective resistance, when the electrical signals are 

switched off. Due to its nano-scale dimensions, non-volatility and memorizing 

properties, the memristor is a sound potential candidate for application in 

computer high-density memories, artificial neural networks and in many other 

electronic devices.