bokomslag Dopants and Defects in Semiconductors
Vetenskap & teknik

Dopants and Defects in Semiconductors

Matthew D McCluskey Eugene E Haller

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Andra format:

  • 372 sidor
  • 2021
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics an easy reading, broad introductory overview of the field" Materials Today " well written, with clear, lucid explanations " Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
  • Författare: Matthew D McCluskey, Eugene E Haller
  • Format: Pocket/Paperback
  • ISBN: 9780367781439
  • Språk: Engelska
  • Antal sidor: 372
  • Utgivningsdatum: 2021-03-31
  • Förlag: CRC Press