Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains 1
bokomslag Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains
Vetenskap & teknik

Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains

Mike Peralta

Häftad

249:-

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  • 24 sidor
  • 2018
  • Författare: Mike Peralta
  • Format: Häftad
  • ISBN: 9781727211337
  • Språk: Engelska
  • Antal sidor: 24
  • Utgivningsdatum: 2018-09-01
  • Förlag: Createspace Independent Publishing Platform

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