Narrow Gap Semiconductors

This volume presents the proceedings of a NATO Workshop which provided a forum for the exchange of information on the science and technology of narrow gap semiconducting materials and related devices. The aim of the workshop was to stimulate discussion on the latest results of new material systems and to develop future directions for research. The contributors included an overview of the role of mercury cadmium telluride as the dominant material within the IR detector market, particularly in view of the growing competition from III-IV compounds and other material systems. Growth studies involved papers on the MBE and CBE of HgCdTe, the MOVPE of HgCdTe and the expansion of IV-VIs and InSb. Device and characterization topics included studies of the properties of HgCdTe, quantum size effects, HgCdTe devices for use at 77K and at higher operating temperatures, III-V quantum well devices and Sb-containing devices.