bokomslag The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Vetenskap & teknik

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Zhiqiang Li

Inbunden

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  • 59 sidor
  • 2016
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8107cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
  • Författare: Zhiqiang Li
  • Illustratör: Bibliographie 6 schwarz-weiße und 75 farbige Abbildungen
  • Format: Inbunden
  • ISBN: 9783662496817
  • Språk: Engelska
  • Antal sidor: 59
  • Utgivningsdatum: 2016-06-22
  • Förlag: Springer-Verlag Berlin and Heidelberg GmbH & Co. K