Semi-insulating III-V Materials

This volume contains the proceedings of the 6th International Conference on Semi-Insulating III-V Materials, held in Toronto, Ontario, Canada in May 1990. The topics that attracted researchers from both academia and industry included those which have been integral to previous conferences, such as the nature of defects and deep levels, and the details of the dependence of device performance on materials properties, as well as results from new characterization techniques and the new approach of epitaxial growth of high resistivity buffer layers. Several papers and a panel discussion addressed the issues of stoichiometry and LEC puller chemistry. Semi-insulating InP and InGaAs were also discussed.