2229:-
Uppskattad leveranstid 7-12 arbetsdagar
Fri frakt för medlemmar vid köp för minst 249:-
Andra format:
- Pocket/Paperback 2229:-
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
- Illustratör: 50 schwarz-weiße Tabellen 70 schwarz-weiße Abbildungen
- Format: Inbunden
- ISBN: 9783709103814
- Språk: Engelska
- Antal sidor: 252
- Utgivningsdatum: 2010-11-24
- Förlag: Springer Verlag GmbH