bokomslag Strain-Induced Effects in Advanced MOSFETs
Vetenskap & teknik

Strain-Induced Effects in Advanced MOSFETs

Viktor Sverdlov

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Andra format:

  • 252 sidor
  • 2016
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
  • Författare: Viktor Sverdlov
  • Format: Pocket/Paperback
  • ISBN: 9783709119334
  • Språk: Engelska
  • Antal sidor: 252
  • Utgivningsdatum: 2016-08-23
  • Förlag: Springer Verlag GmbH