Low Power and Reliable SRAM Memory Cell and Array Design 1
bokomslag Low Power and Reliable SRAM Memory Cell and Array Design
Vetenskap & teknik

Low Power and Reliable SRAM Memory Cell and Array Design

Koichiro Ishibashi • Kenichi Osada

Pocket

1499:-

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Andra format:

  • 144 sidor
  • 2013
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
  • Författare: Koichiro Ishibashi, Kenichi Osada
  • Format: Pocket/Paperback
  • ISBN: 9783642270185
  • Språk: Engelska
  • Antal sidor: 144
  • Utgivningsdatum: 2013-11-27
  • Förlag: Springer-Verlag Berlin and Heidelberg GmbH & Co. K

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